Passivated Implanted Planar Silicon Detectors (PIPS Detector)——RDW Series

Application Fields

◆ Charged particle detection

◆ Alpha spectrum measurement

◆ Low background α、β measurement

Specification

The passivated implanted planar silicon detector (PIPS detector) produced by our company is designed using planar technology. The geometric shape is precisely determined through photolithography technology, and the ion implantation process forms the connecting contact. It has smaller reverse leakage current and a thinner dead layer thickness of the entrance window. It is mainly used for measuring alpha particles and beta rays, and is widely used in nuclear science and technology, radiation protection and monitoring, environmental radiation detection, et al.
Compared with the Silicon Surface Barrier detector (SSB), the edge of its structure is embedded inside the detector instead of being sealed with epoxy resin, which reduces the leakage current. Ion implantation technology can obtain a thinner thickness of the dead layer, which is beneficial to improve detection resolution while maintaining a sturdy and reliable contact electrode.

◆ Ion implantation process forms thinner and more precise connecting contact, low noise, and better energy resolution

◆ Thinner dead layer thickness of the entrance

◆ The advanced surface passivation process provides lower leakage current

◆ The entrance window surface can be optionally covered with an aluminum layer or SiO2. The aluminum window is sturdy, durable, and easy to clean

◆ Standard SMA interface/SMT patch, with good compatibility

◆ The standard detector can be baked at 120 ℃